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128kx36 flow-through sram with nobl? architecture cy7c1351 cypress semiconductor corporation 3901 north first street san jose ca 95134 408-943-2600 august 9, 1999 features pin compatible and functionally equivalent to zbt? de- vices idt71v547, mt55l128l36f, and mcm63z737 supports 66-mhz bus operations with zero wait states ? data is transferred on every clock internally self-timed output buffer control to eliminate the need to use oe registered inputs for flow-through operation byte write capability 128k x 36 common i/o architecture single 3.3v power supply fast clock-to-output times ? 11.0 ns (for 66-mhz device) ? 12.0 ns (for 50-mhz device) ? 14.0 ns (for 40-mhz device) clock enable (cen ) pin to suspend operation synchronous self-timed writes asynchronous output enable jedec-standard 100 tqfp package burst capability?linear or interleaved burst order low standby power functional description the cy7c1351 is a 3.3v, 128k by 36 synchronous flow-through burst sram designed specifically to support unlimited true back-to-back read/write operations without the insertion of wait states. the cy7c1351 is equipped with the advanced no bus latency? (nobl?) logic required to en- able consecutive read/write operations with data being trans- ferred on every clock cycle. this feature dramatically improves the throughput of data through the sram, especially in sys- tems that require frequent write/read transitions. the cy7c1351 is pin/functionally compatible to zbt srams idt71v547, mt55l128l36f, and mcm63z737. all synchronous inputs pass through input registers controlled by the rising edge of the clock.the clock input is qualified by the clock enable (cen ) signal, which when deasserted sus- pends operation and extends the previous clock cycle. maxi- mum access delay from the clock rise is 11.0 ns (66-mhz device). write operations are controlled by the four byte write select (bws [3:0] ) and a write enable (we ) input. all writes are con- ducted with on-chip synchronous self-timed write circuitry. three synchronous chip enables (ce 1 , ce 2 , ce 3 ) and an asynchronous output enable (oe ) provide for easy bank se- lection and output three-state control. in order to avoid bus contention, the output drivers are synchronously three-stated during the data portion of a write sequence. . clk a [16:0] cen we bws ce 1 ce 3 ce 2 oe 128kx36 memory array logic block diagram dq [31:0] data-in reg. q d ce control and write logic [3:0] adv/ld 36 36 17 17 36 mode dp [3:0] selection guide 7C1351-66 7c1351-50 7c1351-40 maximum access time (ns) 11.0 12.0 14.0 maximum operating current (ma) commercial 250 ma 200 ma 175 ma maximum cmos standby current (ma) commercial 5 ma 5 ma 5 ma nobl and no bus latency are trademarks of cypress semiconductor corporation. zbt is a trademark of integrated device technology.
cy7c1351 2 pin configuration a 5 a 4 a 3 a 2 a 1 a 0 dnu dnu v ss v dd dnu a 10 a 11 a 12 a 13 a 14 a 16 dp 1 dq 15 dq 14 v ddq v ss dq 13 dq 12 dq 11 dq 10 v ss v ddq dq 9 dq 8 v ss v ss v dd dq 7 dq 6 v ddq v ss dq 5 dq 4 dq 3 dq 2 v ss v ddq dq 1 dq 0 dp 0 dp 2 dq 16 dq 17 v ddq v ss dq 18 dq 19 dq 20 dq 21 v ss v ddq dq 22 dq 23 v ss v dd v dd v ss dq 24 dq 25 v ddq v ss dq 26 dq 27 dq 28 dq 29 v ss v ddq dq 30 dq 31 dp 3 a6 a7 ce 1 ce 2 bws 3 bws 2 bws 1 bws 0 ce 3 v dd v ss clk we cen oe a 8 a 9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 a 15 adv/ld v ss mode dnu nc nc 100 - pin tqfp cy7c1351
cy7c1351 3 pin definitions pin number name i/o description 50 ? 44, 81 ? 82, 99, 100, 32 ? 37 a [16:0] input- synchronous address inputs used to select one of the 133,072 address locations. sampled at the rising edge of the clk. 96 ? 93 bws [3:0] input- synchronous byte write select inputs, active low. qualified with we to conduct writes to the sram. sampled on the rising edge of clk. bws 0 controls dq [7:0] and dp 0 , bws 1 controls dq [15:8] and dp 1 , bws 2 controls dq [23:16] and dp 2 , bws 0 controls dq [31:24] and dp 3 . 88 we input- synchronous write enable input, active low. sampled on the rising edge of clk if cen is active low. this signal must be asserted low to initiate a write sequence. 85 adv/ld input- synchronous advance/load input used to advance the on-chip address counter or load a new address. when high (and cen is asserted low) the internal burst counter is advanced. when low, a new address can be loaded into the device for an access. after being deselected, adv/ld should be driven low in order to load a new address. 89 clk input-clock clock input. used to capture all synchronous inputs to the device. clk is qualified with cen . clk is only recognized if cen is active low. 98 ce 1 input- synchronous chip enable 1 input, active low. sampled on the rising edge of clk. used in conjunction with ce 2 and ce 3 to select/deselect the device. 97 ce 2 input- synchronous chip enable 2 input, active high. sampled on the rising edge of clk. used in conjunction with ce 1 and ce 3 to select/deselect the device. 92 ce 3 input- synchronous chip enable 3 input, active low. sampled on the rising edge of clk. used in conjunction with ce 1 and ce 2 to select/deselect the device. 86 oe input- asynchronous output enable, active low. combined with the synchronous logic block inside the device to control the direction of the i/o pins. when low, the i/o pins are allowed to behave as outputs. when deasserted high, i/o pins are three-stated, and act as input data pins. oe is masked during the data portion of a write sequence, during the first clock when emerging from a deselected state and when the device has been deselected. 87 cen input- synchronous clock enable input, active low. when asserted low the clock signal is recog- nized by the sram. when deasserted high the clock signal is masked. since deasserting cen does not deselect the device, cen can be used to extend the previous cycle when required. 29 ? 28, 25 ? 22, 19 ? 18, 13 ? 12, 9 ? 6, 3 ? 2, 79 ? 78, 75 ? 72, 69 ? 68, 63 ? 62, 59 ? 56, 53 ? 52 dq [31:0] i/o- synchronous bidirectional data i/o lines. as inputs, they feed into an on-chip data register that is triggered by the rising edge of clk. as outputs, they deliver the data contained in the memory location specified by a [16:0] during the previous clock rise of the read cycle. the direction of the pins is controlled by oe and the internal control logic. when oe is asserted low, the pins can behave as outputs. when high, dq [31:0] are placed in a three-state condition. the outputs are automatically three-stated during the data portion of a write sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of oe . 1, 30, 51, 80 dp [3:0] i/o- synchronous bidirectional data parity i/o lines. functionally, these signals are identical to dq [31:0] . during write sequences, dp 0 is controlled by bws 0 , dp 1 is controlled by bws 1 , dp 2 is controlled by bws 2 , and dp 3 is controlled by bws 3 . 31 mode input strap pin mode input. selects the burst order of the device. tied high selects the interleaved burst order. pulled low selects the linear burst order. mode should not change states during operation. when left floating mode will default high, to an inter- leaved burst order. 15, 16, 41, 65, 91 v dd power supply power supply inputs to the core of the device. should be connected to 3.3v power supply. 4, 11, 20, 27, 54, 61, 70, 77 v ddq i/o power supply power supply for the i/o circuitry. should be connected to a 3.3v power supply. 5, 10, 14, 17, 21, 26, 40, 60, 64, 66 ? 67, 55, 71, 76, 90 v ss ground ground for the device. should be connected to ground of the system.
cy7c1351 4 introduction functional overview the cy7c1351 is a synchronous flow-through burst sram designed specifically to eliminate wait states during write-read transitions. all synchronous inputs pass through input registers controlled by the rising edge of the clock. the clock signal is qualified with the clock enable input signal (cen ). if cen is high, the clock signal is not recognized and all internal states are maintained. all synchronous operations are qualified with cen . maximum access delay from the clock rise (t cdv ) is 11.0 ns (66-mhz device). accesses can be initiated by asserting all three chip enables (ce 1 , ce 2 , ce 3 ) active at the rising edge of the clock. if clock enable (cen ) is active low and adv/ld is asserted low, the address presented to the device will be latched. the access can either be a read or write operation, depending on the status of the write enable (we ). bws [3:0] can be used to con- duct byte write operations. write operations are qualified by the write enable (we ). all writes are simplified with on-chip synchronous self-timed write circuitry. three synchronous chip enables (ce 1 , ce 2 , ce 3 ) and an asynchronous output enable (oe ) simplify depth expansion. all operations (reads, writes, and deselects) are pipelined. adv/ld should be driven low once the device has been de- selected in order to load a new address for the next operation. single read accesses a read access is initiated when the following conditions are satisfied at clock rise: (1) cen is asserted low, (2) ce 1 , ce 2 and ce 3 are all asserted active, (3) the write enable input signal we is deasserted high, and 4) adv/ld is asserted low. the address presented to the address inputs (a 0 ? a 16 ) is latched into the address register and presented to the memory core and control logic. the control logic determines that a read access is in progress and allows the requested data to propagate to the output buffers. the data is available within 11.0 ns (66-mhz device) provided oe is active low. after the first clock of the read access the output buffers are controlled by oe and the internal control logic. oe must be driven low in order for the device to drive out the requested data. on the subsequent clock, another operation (read/write/deselect) can be initiated. when the sram is de- selected at clock rise by one of the chip enable signals, its output will three-stated immediately. burst read accesses the cy7c1351 has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four reads without reasserting the address inputs. adv/ld must be driven low in order to load a new address into the sram, as described in the single read access section above. the sequence of the burst counter is determined by the mode input signal. a low input on mode selects a linear burst mode, a high selects an interleaved burst sequence. both burst counters use a0 and a1 in the burst sequence, and will wrap around when incremented sufficiently. a high input on adv/ld will increment the internal burst counter regardless of the state of chip enables inputs or we . we is latched at the beginning of a burst cycle. therefore, the type of access (read or write) is maintained throughout the burst sequence. single write accesses write access are initiated when the following conditions are satisfied at clock rise: (1) cen is asserted low, (2) ce 1 , ce 2 , and ce 3 are all asserted active, and (3) the write signal we is asserted low. the address presented to a 0 ? a 16 is loaded into the address register. the write signals are latched into the control logic block. the data lines are automatically three-stated regardless of the state of the oe input signal. this allows the external logic to present the data on dq [31:0] and dp [3:0] . on the next clock rise the data presented to dq [31:0] and dp [3:0] (or a subset for byte write operations, see write cycle description table for details) inputs is latched into the device and the write is complete. additional accesses (read/write/deselect) can be initiated on this cycle. the data written during the write operation is controlled by bws [3:0] signals. the cy7c1351 provides byte write capabil- ity that is described in the write cycle description table. as- serting the write enable input (we ) with the selected byte write select (bws [3:0] ) input will selectively write to only the desired bytes. bytes not selected during a byte write operation will remain unaltered. a synchronous self-timed write mecha- nism has been provided to simplify the write operations. byte write capability has been included in order to greatly simplify read/modify/write sequences, which can be reduced to sim- ple byte write operations. because the cy7c1351 is a common i/o device, data should not be driven into the device while the outputs are active. the output enable (oe ) can be deasserted high before present- ing data to the dq [31:0] and dp [3:0] inputs. doing so will three-state the output drivers. as a safety precaution, dq [31:0] and dp [3:0] .are automatically three-stated during the data por- tion of a write cycle, regardless of the state of oe . burst write accesses the cy7c1351 has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four write operations without reasserting the address inputs. adv/ld must be driven low in order to load the initial ad- dress, as described in the single write access section above. when adv/ld is driven high on the subsequent clock rise, the chip enables (ce 1 , ce 2 , and ce 3 ) and we inputs are ig- nored and the burst counter is incremented. the correct bws [3:0] inputs must be driven in each cycle of the burst write in order to write the correct bytes of data. 83, 84 nc - no connects. reserved for address inputs for depth expansion. pins 83 and 84 will be used for 256k and 512k depths respectively. 38, 39, 42, 43 dnu - do not use pins. these pins should be left floating or tied to v ss . pin definitions (continued) pin number name i/o description
cy7c1351 5 . cycle description truth table [1, 2, 3, 4, 5, 6] operation address used ce cen adv/ ld we bws x clk comments deselected external 1 0 l x x l-h i/os three-state following next recognized clock. suspend - x 1 x x x l-h clock ignored, all operations suspended. begin read external 0 0 0 1 x l-h address latched. begin write external 0 0 0 0 valid l-h address latched, data presented two valid clocks later. burst read operation internal x 0 1 x x l-h burst read operation. previous access was a read operation. ad- dresses incremented internally in conjunction with the state of mode. burst write operation internal x 0 1 x valid l-h burst write operation. previous access was a write operation. ad- dresses incremented internally in conjunction with the state of mode. bytes written are deter- mined by bws [3:0] . notes: 1. x= ? don't care ? , 1=logic high, 0=logic low, ce stands for all chip enables active. bws x = 0 signifies at least one byte write select is active, bws x = valid signifies that the desired byte write selects are asserted, see write cycle description table for details. 2. write is defined by we and bws [3:0] . see write cycle description table for details. 3. the dq and dp pins are controlled by the current cycle and the oe signal. 4. cen =1 inserts wait states. 5. device will power-up deselected and the i/os in a three-state condition, regardless of oe . 6. oe assumed low.
cy7c1351 6 interleaved burst sequence first address second address third address fourth address ax+1, ax ax+1, ax ax+1, ax ax+1, ax 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 linear burst sequence first address second address third address fourth address ax+1, ax ax+1, ax ax+1, ax ax+1, ax 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 write cycle description [1, 2] function we bws 3 bws 2 bws 1 bws 0 read 1xxxx write ? no bytes written 01111 write byte 0 ? (dq [7:0] and dp 0 ) 01110 write byte 1 ? (dq [15:8] and dp 1 ) 01101 write bytes 1, 0 01100 write byte 2 ? (dq [23:16] and dp 2 ) 01011 write bytes 2, 0 01010 write bytes 2, 1 01001 write bytes 2, 1, 0 01000 write byte 3 ? (dq [31:24] and dp 3 ) 00111 write bytes 3, 0 00110 write bytes 3, 1 00101 write bytes 3, 1, 0 00100 write bytes 3, 2 00011 write bytes 3, 2, 0 00010 write bytes 3, 2, 1 00001 write all bytes 00000
cy7c1351 7 maximum ratings (above which the useful life may be impaired. for user guide- lines, not tested.) storage temperature ..................................... ? 65 c to + 150 c ambient temperature with power applied .................................................. ? 55 c to + 125 c supply voltage on v dd relative to gnd ......... ? 0.5v to + 4.6v dc voltage applied to outputs in high z state [7] ..................................... ? 0.5v to v ddq + 0.5v dc input voltage [7] .................................. ? 0.5v to v ddq + 0.5v current into outputs (low)......................................... 20 ma static discharge voltage .......................................... >2001v (per mil-std-883, method 3015) latch-up current.................................................... >200 ma operating range range ambient temperature [8] v dd /v ddq com ? l 0 c to + 70 c 3.3v 5% electrical characteristics over the operating range parameter description test conditions min. max. unit v dd power supply voltage 3.135 3.465 v v ddq i/o supply voltage 3.135 3.465 v v oh output high voltage v dd = min., i oh = ? 4.0 ma [9] 2.4 v v ol output low voltage v dd = min., i ol = 8.0 ma [9] 0.4 v v ih input high voltage 2.0 v dd + 0.3v v v il input low voltage [7] ? 0.3 0.8 v i x input load current gnd v i v ddq ? 5 5 ma input current of mode ? 30 30 ma i oz output leakage current gnd v i v ddq, output disabled ? 5 5 ma i cc v dd operating supply v dd = max., i out = 0 ma, f = f max = 1/t cyc 15-ns cycle, 66 mhz 250 ma 20-ns cycle, 50 mhz 200 ma 25-ns cycle, 40 mhz 175 ma i sb1 automatic ce power-down current ? ttl inputs max. v dd , device deselected, v in v ih or v in v il f = f max = 1/t cyc 15-ns cycle, 66 mhz 60 ma 20-ns cycle, 50 mhz 40 ma 25-ns cycle, 40 mhz 35 ma i sb2 automatic ce power-down current ? cmos inputs max. v dd , device deselected, v in 0.3v or v in > v ddq ? 0.3v, f =0 all speed grades 5 ma i sb3 automatic ce power-down current ? cmos inputs max. v dd , device deselected, or v in 0.3v or v in > v ddq ? 0.3v f = f max = 1/t cyc 15-ns cycle, 66 mhz 50 ma 20-ns cycle, 50 mhz 40 ma 25-ns cycle, 40 mhz 35 ma notes: 7. minimum voltage equals ? 2.0v for pulse duration less than 20 ns. 8. t a is the case temperature. 9. the load used for v oh and v ol testing is shown in figure (b) of the ac test loads.
cy7c1351 8 capacitance [10] parameter description test conditions max. unit c in input capacitance t a = 25 c, f = 1 mhz, v dd = 3.3v v ddq = 3.3v 4 pf c clk clock input capacitance 4 pf c i/o input/output capacitance 4 pf thermal resistance description test conditions symbol tqfp typ. units notes thermal resistance (junction to ambient) still air, soldered on a 4.25 x 1.125 inch, 4-layer printed circuit board ja 28 c/w 10 thermal resistance (junction to case) jc 4 c/w 10 note: 10. tested initially and after any design or process change that may affect these parameters. 3.0v gnd output r=317 ? r=351 ? 5pf including jig and scope (a) (b) all input pulses 1351-2 1351-3 output r l =50 ? z 0 =50 ? v l = 1.5v 3.3v ac test loads and waveforms
cy7c1351 9 switching characteristics over the operating range [11, 12, 13] ? 66 ? 50 ? 40 parameter description min. max. min. max. min. max. unit t cyc clock cycle time 15.0 20.0 25.0 ns t ch clock high 5.0 6.0 7.0 ns t cl clock low 5.0 6.0 7.0 ns t as address set-up before clk rise 2.0 2.0 2.5 ns t ah address hold after clk rise 0.5 1.0 1.0 ns t cdv data output valid after clk rise 11.0 12.0 14.0 ns t doh data output hold after clk rise 1.5 1.5 1.5 ns t cens cen set-up before clk rise 2.0 2.0 2.5 ns t cenh cen hold after clk rise 0.5 1.0 1.0 ns t wes we , bws [3:0] set-up before clk rise 2.0 2.0 2.5 ns t weh we , bws [3:0] hold after clk rise 0.5 1.0 1.0 ns t als adv/ld set-up before clk rise 2.0 2.0 2.5 ns t alh adv/ld hold after clk rise 0.5 1.0 1.0 ns t ds data input set-up before clk rise 1.7 2.0 2.5 ns t dh data input hold after clk rise 0.5 1.0 1.0 ns t ces chip select set-up 2.0 2.0 2.5 ns t ceh chip select hold after clk rise 0.5 1.0 1.0 ns t chz clock to high-z [10, 12, 13, 14] 5.0 5.0 5.0 ns t clz clock to low-z [10, 12, 13, 14] 3.0 3.0 3.0 ns t eohz oe high to output high-z [10, 12, 13, 14] 6.0 7.0 8.0 ns t eolz oe low to output low-z [10, 12, 13, 14] 0 0 0 ns t eov oe low to output valid [12] 6.0 7.0 8.0 ns notes: 11. unless otherwise noted, test conditions assume signal transition time of 2 ns or less, timing reference levels of 1.5v, inpu t pulse levels of 0 to 3.0v, and output loading shown in (a) of ac test loads. 12. t chz , t clz , t eov , t eolz , and t eohz are specified with a/c test conditions shown in part (a) of ac test loads. transition is measured 200 mv from steady-state voltage. 13. at any given voltage and temperature, t eohz is less than t eolz and t chz is less than t clz to eliminate bus contention between srams when sharing the same data bus. these specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. device is designed to achieve high-z prior to low-z under the same system conditions. 14. this parameter is sampled and not 100% tested.
cy7c1351 10 switching waveforms cen clk address ce we data- in/out t cyc t ch t cl t cens t cenh ra1 t ah t as t ws t wh t ces t ceh t cdv q4 q1 = don ? t care = undefined we is the combination of we & bws x to define a write cycle (see write cycle description table). out d2 in d5 in out read write deselect write read read read suspend read deselect deselect wa2 ra3 ra4 wa5 ra6 ra7 t clz t doh q3 out t chz ce is the combination of ce 1 , ce 2 , and ce 3 . all chip selects need to be active in order to select the device. any chip select can deselect the device. rax stands for read address x, wax stands for device originally deselected write address x, dx stands for data-in x, qx stands for data-out x. q7 out t chz t cens t cenh t doh q6 out read/write/deselect sequence
cy7c1351 11 switching waveforms (continued) adv/ld clk address ce 1a data- in/out t cyc t ch t cl t als t alh ra1 t ah t as t ces t ceh t cdv q1 = don ? t care = undefined the combination of we & bws [3:0] defines a write cycle (see write cycle description table). out begin read burst read t clz t doh ce is the combination of ce 1 , ce 2 , and ce 3 . all chip enables need to be active in order to select the device. any chip enable can deselect the device. rax stands for read address x, wax stands for device originally deselected write address x, dx stands for data-in for location x, qx stands for data-out for location x. cen held wa2 q1+1 out q1+2 out q1+3 out ra3 t clz t chz d2+1 in d2+2 in d2+3 in d2 in t cdv q3 out t ds t dh burst read burst read begin write burst write burst write burst write begin read burst read burst read burst sequences bws [3:0] t ws t wh we t ws t wh low. during burst writes, byte writes can be conducted by asserting the appropriate bws [3:0] input signals. burst order determined by the state of the mode input. cen held low. oe held low. out q3+1
cy7c1351 12 document #: 38-00691-c ordering information speed (mhz) ordering code package name package type operating range 66 cy7C1351-66ac a101 100-lead 14 x 20 x 1.4 mm thin quad flat pack commercial 50 cy7c1351-50ac a101 100-lead 14 x 20 x 1.4 mm thin quad flat pack commercial 40 cy7c1351-40ac a101 100-lead 14 x 20 x 1.4 mm thin quad flat pack commercial switching waveforms (continued) oe three-state i/os oe timing t eohz t eov t eolz
cy7c1351 ? cypress semiconductor corporation, 1999. the information contained herein is subject to change without notice. cypress semico nductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress semiconductor product. nor does it convey or imply any license unde r patent or other rights. cypress semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected t o result in significant injury to the user. the inclusion of cypress semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in do ing so indemnifies cypress semiconductor against all charges. package diagram 100-pin thin plastic quad flatpack (14 x 20 x 1.4 mm) a101 51-85050-a

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